Demonstration of an F-Band Heterogeneously Integrated Multichip Downconverter

IEEE Microwave and Wireless Technology Letters 2026

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Authors: Caitlyn M. Cooke, Kevin M. K. H. Leong, Michael B. Eller, Maxwell Robert Duffy, Nancy J. Lin, X. B. Mei, K. K. Loi, Alfonso Escorcia, Khanh T. Nguyen, Samuel D. Esparza, William R. Deal
DOI: 10.1109/lmwt.2026.3676704
Cited by: 1
References: 17

Abstract

In this work, a suite of 35-nm InP high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) chiplets are heterogeneously integrated on a 75-$\mu $m SiC interposer. Performance of each integrated chiplet component is demonstrated at the F band (90–140GHz), including 50-$\Omega $transmission lines, a 116-GHz bandpass filter with 4-dB loss and 10% bandwidth, and an F-band low noise amplifier (LNA) with 20-dB gain and a 3.6-dB packaged noise figure. These components are integrated on a single SiC interposer with an InP HEMT second-harmonic mixer to demonstrate an F-band downconverter multichiplet module. This is the first reported heterogeneous integration of the 35-nm InP HEMT process on SiC interposer, as well as the first reported F-band heterogeneously integrated downconverter.

Fields of Study & Subjects

Radio Frequency Integrated Circuit Design Advanced Power Amplifier Design Low-power high-performance VLSI design

Publication details

Journal / source
IEEE Microwave and Wireless Technology Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
36
Issue
6
Pages
922–925
Publication date
2 April 2026