Fabrication and Characterization of Al/Ti/HfO$_{2}$/W Memristor-Based RF Switches

IEEE Microwave and Wireless Technology Letters 2026 Open access

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Authors: Oscar Tobias Amarilla Rios, Mireia Bargallo Gonzalez, F. Campabadal, Montserrat Nafría i Maqueda, Albert Crespo Yepes, Pedro de Paco, Jordi Verdú
DOI: 10.1109/lmwt.2026.3678995
Cited by: 1
References: 21

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing MXene and MAX Phase Materials

Publication details

Journal / source
IEEE Microwave and Wireless Technology Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
36
Issue
9
Pages
1498–1501
Publication date
1 September 2026
Language
EN