Fabrication of 640 × 512/25 μ m LWIR Focal Plane Array Based on InAs/GaSb Superlattice

IEEE Photonics Technology Letters 2026

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Authors: Junbin Li, Peifeng Zhang, Longhua Chen, Zhe Zhang, Li Zhang, Wei Wang, Ying Su, Jiankai Xue, Xurui Peng, Haiyan Shi, Zichen Zhang
DOI: 10.1109/lpt.2026.3658437
Cited by: 2
References: 25

Abstract

A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3×10-5A/cm². With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Superconducting and THz Device Technology Semiconductor Quantum Structures and Devices

Publication details

Journal / source
IEEE Photonics Technology Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
38
Issue
10
Pages
631–634
Publication date
28 January 2026