Thin-Film Ultra-Low Voltage Lateral Single Photon Avalanche Diode on ET-SOI Substrate
Abstract
Single photon avalanche diode (SPAD) is the important optoelectronic component to detect very weak light with enough sensitivity. However, it requires the 50 V-class high-voltage circuits; consequently large power consumption and electrical breakdown countermeasure are significant drawback. This study proposes the concept of oxide fixed charge enhanced lateral SPAD design by numerical simulations. The design is based on the extremely-thin (ET) silicon-on-insulator (SOI) technology, and the top oxide and the BOX induce internal electric field to enhance the avalanche breakdown. The proposed SPAD features sub-10 V breakdown voltage regardless of the choice of oxides, and successfully detects a photon under the wide range of wavelength including the visible light.
Fields of Study & Subjects
Advanced Optical Sensing Technologies
Advanced Photonic Communication Systems
Advanced Fiber Laser Technologies
Publication details
- Journal / source
- IEEE Sensors Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 10
- Issue
- 2
- Pages
- 1–4
- Publication date
- 13 January 2026