A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

IEEE Solid-State Circuits Letters 2026 Open access

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Authors: D. Cerviño Fungueiriño, L.A. Enthoven, J. van Staveren, Masoud Babaie, Fabio Sebastiano
DOI: 10.1109/lssc.2025.3650657
Cited by: 1
References: 16

Abstract

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5K. By adopting sensing elements (CMOS bulk diodes, PMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order Sigma-Delta readout and cryogenic-aware design techniques, the sensor achieves a maximum error of ±0.73K (4 samples, 2-point trim), a resolution below 0.05K for a 102.4ms readout duration, and a power consumption of 15.5μW (93.5μW) at 5K (296K).

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Advanced MEMS and NEMS Technologies Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
IEEE Solid-State Circuits Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
9
Pages
29–32
Publication date
1 January 2026