Subtractive Nanofluidics in 65-nm CMOS Copper BEOL Achieve 100-nm Width
Abstract
This paper presents the first implementation of 100-nm-wide nanofluidics in a 65-nm CMOS chip using a onestep wet-etch to remove the copper routing from the back-end-of-line (BEOL) while maintaining transistor integrity through continuous monitoring of the IDS-VGScharacteristics. Vertical fluidics are also successfully demonstrated by etching through$360 \text{nm} \times 360 \text{nm}$-sized vias. A non-destructive laser microscopy technique for imaging fluidic channels at a dimension below the visiblelight wavelength is developed.
Fields of Study & Subjects
Microfluidic and Capillary Electrophoresis Applications
Advancements in Semiconductor Devices and Circuit Design
Copper Interconnects and Reliability
Publication details
- Journal / source
- IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
- Volume
- 2026
- Pages
- 1598–1600
- Publication date
- 25 January 2026
- Language
- EN