A Fast-Settling CMOS-MEMS Resoswitch using A Structurally Damped Output Electrode

This work demonstrates, for the first time, a fastsettling CMOS-MEMS resoswitch that achieves a significant reduction in transient time using a structurally damped output electrode. Rather than relying on soft, lowstiffness electrodes or specific contact materials, this approach leverages contact structure engineering to introduce damping. Soft electrodes alone cannot serve as a practical solution, as they can reduce the contact force, increase the contact resistance, and accelerate device failure. Here, a CMOS-MEMS-based clamped-clamped beam (CC-beam) with integrated damping holes-while maintaining equivalent stiffness and mass-is designed as a low-$Q$output electrode (“damper-beam”) and compared to a standard high-$Q$CC-beam electrode. By introducing damping into a mechanically robust electrode, post-impact instabilities, i.e., squegging, are minimized while sufficient contact force is preserved. As a result, the transient settling time is reduced by up to 60 % using the low-$Q$damped electrode$(Q \approx 700)$compared to a standard one ($Q \approx 2000$), without degradation of the output waveform. This structure-engineering strategy opens a new design space for high-speed, reliable resoswitch devices.