Accurate Model of RF Frequency Tuning in 2D NEMS Using a Fringing-Sensitive Capacitance

We present a comprehensive fringing-field-sensitive frequency model for gate-voltage tuning of twodimensional (2D) NEMS resonators, improving on parallel-plate approximations. The model shows that while the effect of fringing fields is negligible at low gate voltages ($\mathrm{V}_{\text{GS}}$), it becomes increasingly relevant as$\mathrm{V}_{\text{GS}}$rises. Validated on five few-layer$\text{MoS}_{2}$devices, the model accurately fits data, capturing a$\sim 30 \text{MHz}$tuning range over a 5 V sweep and peak frequencies up to 60 MHz, and produces the high-$\mathrm{V}_{\text{GS}}$slope without parameter compensation. The model thus enables accurate extraction of initial strain and mass density, allowing precise frequency setpoints and tunable passbands.