Characterization of Leakage Currents and Conduction Models in AL 0.7 SC 0.3 N Piezoelectric Stacks

This paper presents a comprehensive analysis of leakage current mechanisms in 30 % Sc-doped AlN$\left(\text{Al}_{0.7} \text{Sc}_{0.3} ~\mathrm{N}\right)$piezoelectric thin films with thicknesses of 250, 500, and 1000 nm. Current-voltage (I-V) measurements under Field-up and Field-down polarizations, including reverse measurements after polarization cycling, were analyzed using Schottky and Poole-Frenkel models to identify dominant conduction processes before and after switching. Unlike prior studies on thinner films, this work reveals a significant reduction in trap activation energy post-switching, leading to increased leakage current independent of thickness. These findings clarify trap-assisted conduction mechanisms and their evolution, offering insights to improve device endurance and performance.