Monolithic Integration of GaN-Based Flexible Microcantilever for Opto-Electromechanical Force Sensing
Abstract
This study presents a novel micro-opto-electromechanical coupling force sensor realized on a monolithic GaN-on-Si process platform. Unlike commercial optical sensors that require significant space and additional fiber, the proposed device monolithically integrates a micro light-emitting diode (micro-LED) on a GaN-based microcantilever with a photodetector (PD) on a single chip, thereby achieving light emission, transmission, and reception. Experimental results show that a$100-\mu \mathrm{A}$current was applied to the micro-LED, the PD photocurrent increased from 5.8 to 7.5 nA under different probing strokes, corresponding to a sensitivity of$0.04 \text{nA} / \mu \mathrm{m}$. These results confirm that the proposed monolithic integration method enables a high-precision, compact opto-electro-mechanical force sensor by improving coupling efficiency and reducing assembly complexity.
Fields of Study & Subjects
Advanced MEMS and NEMS Technologies
GaN-based semiconductor devices and materials
Mechanical and Optical Resonators
Publication details
- Journal / source
- IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
- Pages
- 1034–1037
- Publication date
- 25 January 2026
- Language
- EN