Design and Implementation of a 650 V Monolithic GaN Power IC in a DFN Package With 120 mΩ R DS(on) and Sub-5 ns Switching

In this work, a 650V monolithic enhancement-mode (e-mode) Gallium nitride (GaN) power integration is proposed for industrial applications, integrating ESD protection, a Schmitt trigger, a pre-driver, and a main driver with a high-voltage e-mode GaN HEMTRDS(on)= 120mΩ. To minimize die size and production costs, a compact layout strategy is implemented, where the driver circuitry is strategically placed underneath the high-voltage GaN source pad. For industrial application, the IC was packaged to a compact 8mm x 8mm DFN package for performance evaluation. Experimental results from double pulse tests (DPT) demonstrate a sub-5ns switching time under 400V/6A conditions. Furthermore, the GaN Power IC was evaluated in a 400W hard-switching boost converter, achieving a peak efficiency of 97.9%.