Overview of Thermal Modeling and Monitoring for SiC Multi-Chip Power Modules

Silicon carbide (SiC) multi-chip power modules (MCPMs) have emerged as critical components in high-power and high-reliability power electronics due to their superior integration capability and performance potential. However, the inherent structural complexity and intense thermal coupling effects pose significant challenges in thermal modeling and monitoring. This paper provides a comprehensive review of recent advances in thermal modeling and monitoring methods tailored specifically for SiC MCPMs. Thermal modeling approaches are thoroughly analyzed, highlighting their respective advantages and limitations in terms of computational efficiency, accuracy, and applicability. Additionally, various direct and indirect thermal monitoring techniques are discussed, examining their practical implementations, strengths, and constraints. To address existing challenges in thermal modeling and monitoring of SiC MCPMs, future research directions are identified. Challenges and opportunities in thermal modeling and monitoring have been specifically analyzed and discussed for SiC MCPMs with advanced packaging technologies. This review not only summarizes the state-of-the-art methodologies but also identifies potential research pathways to enhance the accuracy and robustness of thermal modeling and monitoring for SiC MCPMs. Beyond thermal modeling and monitoring, this paper also serves as a valuable reference for advancing SiC MCPM research in thermal management, packaging design, and lifetime assessment.