High-Output Power Optically Injection-Locked Oscillator in 250 nm SiGe BiCMOS EPIC Technology

This paper presents a high-output power optically injection-locked push-push oscillator in a 250-nm SiGe-BiCMOS EPIC technology. A monolithically integrated photodiode is used as injection signal source that converts the optical reference signal from the optical fiber into an electrical signal. The push-push topology of this circuit serves also as a frequency doubler and enables the generation of signals above the cut-off frequency of the photodiode. The tuning range spans from 90 GHz up to 105 GHz with an injection signal from 45 GHz to 52.5 GHz, the peak output power at 90 GHz is 3.5 dBm. To the best of the knowledge of the authors, this work represents the highest demonstrated frequency and highest output power for an optically injection-locked oscillator in EPIC technologies.