Compact Flip-Chip V-Band Fully Integrated Image Rejection Receiver Using 0.15 µm mHEMT Technology

A compact V-band single-chip receiver compatible to flip-chip technology is demonstrated using 0.15 µm mHEMT (metamorphic high electron mobility transistor) technology. The image rejection receiver consists of a three-stage low-noise amplifier, a 3×LO multiplier chain and an image rejection subharmonic downconverter. Only the input match network of the first-stage LNA is utilized with the coplanar waveguide with backside ground (CPWG) for compatibility with the flip-chip technology and the rest of matching networks are utilized with the microstrip (MS) transmission lines for a small size. mHEMT devices with through- substrate vias are employed as CPWG to MS transition. The flip-chip mHEMT V-band receiver with the chip size of 4.3 mm × 2.4 mm achieves conversion gain of 4.8 dB and noise figure is 7.7 dB at 59 GHz. The best image rejection ratio of 28 dB occurs at 60 GHz.