Zero-Static-Power RSFQ Interconnects via Inductively Biased Unshunted JTLs in a Planarized Double-JJ-Layer Nb Process

To improve circuit density and minimize static power dissipation in Single Flux Quantum (SFQ) circuits, this work investigates the application of inductively biased, unshunted Josephson transmission lines (JTLs) which achieve zero static power, compared with regular resistively biased JTLs. Both simulation and experiment results confirm that unshunted JTLs can reliably propagate SFQ pulses with a bias current margin larger than 50%. Based on this, a new fabrication process has been developed featuring eight niobium (Nb) layers, including two Nb/Al-AlOx/Nb junction layers, a dedicated bias-inductor layer, and dual DC-power layers. The vertical functional separation allows 2 active layers. The 1stactive layer uses conventional shunted JJs for logic gates, while the 2nduses unshunted JTLs with inductive bias. This configuration eliminates static power in the interconnect network and simplifies thermal management in stacked Rapid SFQ (RSFQ) architectures. A ten-stage unshunted JTL chain and a hybrid half-adder were designed and demonstrated. Measurements show a 66.7% reduction in static power and a 64.7% reduction in area compared with the Chinese Academy of Scienceconventional single-JJ-layer process. These results verify, for the first time, that inductively biased unshunted interconnects can be monolithically integrated with standard RSFQ logic, offering a scalable path toward ultra-dense, lower-power multilayer superconducting circuits.