Low-Bit-Error-Rate Cross-Temperature Compensation in 3-D TLC NAND Flash Memory: Observations, Modeling, and Solutions

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2026

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Authors: Qianqi Zhao, Q. Li, Jing He, Ying Yang, Qingsong Pei, Hua Feng, Qi Wang, Zongliang Huo
DOI: 10.1109/tcad.2026.3661894
Cited by: 0
References: 44

Fields of Study & Subjects

Advanced Data Storage Technologies Semiconductor materials and devices Radiation Effects in Electronics

Publication details

Journal / source
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume
45
Issue
10
Pages
4546–4559
Publication date
6 February 2026