Simulation of the Dynamic Process and Quality-Influencing Mechanisms in Wafer-to-Wafer Hybrid Bonding
Abstract
Hybrid wafer bonding is a key technology for enabling fine-pitch 3D integration, yet its quality remains highly sensitive to wafer warpage and misalignment. This study develops a 3D finite element model that captures bonding dynamics by integrating multiple physical effects. Simulation results reveal that the bonding gap and the timing of vacuum release critically influence bonding wave propagation and void formation. Reliability analysis shows a strong linear correlation between initial warpage, post-bonding deformation, and bump misalignment. Based on the linear influence of initial warpage, wafer warpage mitigation strategies are proposed, in which deformable vacuum chucks are more effective than stress-engineered films. The proposed framework offers a practical tool for improving bonding yield in 3D integration processes.
Fields of Study & Subjects
3D IC and TSV technologies
Electronic Packaging and Soldering Technologies
VLSI and Analog Circuit Testing
Publication details
- Journal / source
- IEEE Transactions on Components Packaging and Manufacturing Technology
- Volume
- 16
- Issue
- 3
- Pages
- 618–626
- Publication date
- 9 February 2026
- Language
- EN