Copper–Copper Thermal Compression Bonding Scheme for Heterogeneous Wafer-Scale Integration

Wafer-scale integration is a promising pathway to meet the increasing processor-to-memory bandwidth and memory capacity demands of next-generation high-performance computing (HPC) and artificial intelligence (AI) applications. While several architectural concepts for wafer-scale computing have been proposed, comparatively fewer efforts have focused on the practical challenges of assembly and implementation at scale. In this work, we evaluate the technological readiness of Copper-Copper (Cu–Cu) direct thermal compression bonding for enabling wafer-scale integration on a silicon interconnect fabric (Si-IF) platform. We present a high-throughput Cu–Cu bonding scheme tailored for heterogeneous integration, emphasizing key design, process, and tooling parameters that critically impact assembly yield. Strategies for further enhancing yield and manufacturability are also discussed. Our work demonstrates that Cu–Cu direct bonding on the Si-IF platform, provides a viable and scalable solution for realizing wafer-scale systems, potentially accelerating the deployment of heterogeneous wafer-scale computing in future advanced packaging ecosystems.