Embedded High-Power RF Chips in Glass Core Package
Abstract
Chip-embedded glass packaging provides a promising solution for RF system integration. However, its performance at higher power levels hasn’t been documented. This paper presents the electrical and thermal performance of an RF power amplifier (PA) embedded in a glass package. A 22.5-W GaN-PA embedded glass package has been designed, fabricated and tested. The results show that the deviation of the electrical performance between the bare die and packaged PA is minimal. In addition, the packaged PA showed good thermal performance at a power density of 0.89W/mm2. Also, the model and measurements show good correlation.
Fields of Study & Subjects
Advanced Power Amplifier Design
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- IEEE Transactions on Components Packaging and Manufacturing Technology
- Volume
- 16
- Issue
- 4
- Pages
- 693–702
- Publication date
- 25 February 2026
- Language
- EN