Improving Atomic Layer Deposition Process of Silicon Oxide (SiO 2 ) With Single and Double Pulse Processes

Due to hardly known film properties, precursor savings and hardware modifications of the atomic layer deposition (ALD) equipment, the bis(diethylamino)silane (SiBDEA)/ozone-oxygen (O₃/O₂) silicon oxide (SiO₂) process requires re-optimization. Using design of experiments (DoE), the old double pulse (ODP) process was transformed into a new single pulse (NSP) process for SiO₂ deposition. This NSP process achieves film properties comparable to the ODP process, while reducing precursor consumption by 50%. However, unlike literature reports [1], no ALD window was observed across the temperature range of 150 °C–300 °C. The coverage ability on high aspect ratio (HAR) structures (1:32) was also demonstrated. It was determined that at least 50 cycles are necessary for effective protection using the NSP process, which corresponds to a thickness of approximately 4.5 nm. Keeping the precursor saving from NSP process, while enhancing film properties, we investigate another new double pulse (NDP) process. The measurements indicate that the NDP process improves film properties like homogeneity and optical performance.