Electroless-Plated Gold Nanolayer for Low-Temperature Copper Hybrid Bonding
Abstract
This study investigates the deposition and characterization of electroless-plated gold (Au) nanolayers for low-temperature copper (Cu) hybrid bonding applications. A 0.7 μm-thick thermally grown SiO₂ layer on 8-inch Si wafers was coated with a 50 nm Ti adhesion layer and 1 μm Cu layer, followed by electroless Au plating to form ~7 nm nanolayers. Prior to plating, samples underwent wet pretreatment, and post-deposition analyses included X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), and atomic force microscopy (AFM). The electroless-plated Au exhibited predominantly metallic characteristics with minimal Cu oxidation and conformally covered the underlying Cu, achieving an average surface roughness (Rq) of 3.21 nm. Die bonding at 200 °C and 15 MPa demonstrated successful Cu–Au interface formation, and shear strength of 14.9 MPa showed mechanical integrity. Furthermore, selective deposition of Au on patterned Cu pads surrounded by SiO₂ was achieved, and its potential as a cost-effective solution for metal nanolayer formation in Cu hybrid bonding technologies.
Fields of Study & Subjects
Electronic Packaging and Soldering Technologies
Electrodeposition and Electroless Coatings
3D IC and TSV technologies
Publication details
- Journal / source
- IEEE Transactions on Components Packaging and Manufacturing Technology
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 16
- Issue
- 6
- Pages
- 1450–1455
- Publication date
- 23 April 2026