Electroless-Plated Gold Nanolayer for Low-Temperature Copper Hybrid Bonding

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Authors: Byeongchan Go, Hoogwan Lee, Keiyu Komamura, Takanori Kishida, Sarah Eunkyung Kim
Cited by: 1
References: 19

Abstract

This study investigates the deposition and characterization of electroless-plated gold (Au) nanolayers for low-temperature copper (Cu) hybrid bonding applications. A 0.7 μm-thick thermally grown SiO₂ layer on 8-inch Si wafers was coated with a 50 nm Ti adhesion layer and 1 μm Cu layer, followed by electroless Au plating to form ~7 nm nanolayers. Prior to plating, samples underwent wet pretreatment, and post-deposition analyses included X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), and atomic force microscopy (AFM). The electroless-plated Au exhibited predominantly metallic characteristics with minimal Cu oxidation and conformally covered the underlying Cu, achieving an average surface roughness (Rq) of 3.21 nm. Die bonding at 200 °C and 15 MPa demonstrated successful Cu–Au interface formation, and shear strength of 14.9 MPa showed mechanical integrity. Furthermore, selective deposition of Au on patterned Cu pads surrounded by SiO₂ was achieved, and its potential as a cost-effective solution for metal nanolayer formation in Cu hybrid bonding technologies.

Fields of Study & Subjects

Electronic Packaging and Soldering Technologies Electrodeposition and Electroless Coatings 3D IC and TSV technologies

Publication details

Journal / source
IEEE Transactions on Components Packaging and Manufacturing Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
16
Issue
6
Pages
1450–1455
Publication date
23 April 2026