3D Stack In-Sensor-Computing (3DS-ISC): Accelerating Time-Surface Construction for Neuromorphic Event Cameras
Abstract
This work proposes a 3D Stack In-Sensor-Computing (3DS-ISC) architecture for efficient event-based vision processing. A real-time normalization method using an exponential decay function is introduced to construct the time-surface, reducing hardware usage while preserving temporal information. The circuit design utilizes the leakage characterization of Dynamic Random Access Memory(DRAM) for timestamp normalization. Custom interdigitated metal-oxide-metal capacitor (MOMCAP) is used to store the charge and low leakage switch (LL switch) is used to extend the effective charge storage time. The 3DS-ISC architecture integrates sensing, memory, and computation to overcome the memory wall problem, reducing power, latency, and reducing area by$69\times $,$2.2\times $and$1.9\times $, respectively, compared with its 2D counterpart. Moreover, compared to works using a 16-bit SRAM to store timestamps, the ISC analog array can reduce power consumption by three orders of magnitude. In real computer vision (CV) tasks, we applied the spatial-temporal correlation filter (STCF) for denoise, and 3D-ISC achieved almost equivalent accuracy compared to the digital implementation using high precision timestamps. As for the image classification, time-surface constructed by 3D-ISC is used as the input of GoogleNet, achieving 99% on N-MNIST, 85% on N-Caltech101, 78% on CIFAR10-DVS, and 97% on DVS128 Gesture, comparable with state-of-the-art results on each dataset. Additionally, the 3D-ISC method is also applied to image reconstruction using the DAVIS240C dataset, achieving the highest average SSIM (0.62) among three methods. This work establishes a foundation for real-time, resource-efficient event-based processing and points to future integration of advanced computational circuits for broader applications.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Radiation Effects in Electronics
Publication details
- Journal / source
- IEEE Transactions on Circuits and Systems I Regular Papers
- Volume
- 73
- Issue
- 5
- Pages
- 3466–3479
- Publication date
- 5 January 2026