A 20-MHz BW 12.3-ENOB Third-Order Noise-Shaping SAR ADC With Multi-Input Architecture and PVT-Robust Ratio-Based FIA

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Authors: Gabriele Zanoletti, Gabriele Bè, Michele Rocco, Luca Ricci, Alessia Ceroni, Salvatore Levantino, Andrea Leonardo Lacaita, Luca Bertulessi, Andrea Giovanni Bonfanti, Carlo Samori
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Abstract

Noise-shaping successive approximation register (NS-SAR) ADCs combine high resolution with energy efficiency, but their performance degrades at bandwidths in the tens of MHz due to limited oversampling ratios (OSR) and adoption of low-order passive filters. This work introduces a$3{^{\text {rd}}}$-order NS-SAR ADC that leverages a multi-input amplifier and a multi-input comparator, enabling independent optimization and flexible filter coefficient sizing. In addition, a ratio-based floating inverter amplifier ensures remarkable gain stability across process, voltage, and temperature (PVT) variations. Implemented in a 28-nm CMOS process, the prototype achieves 12.3-ENOB over a 20-MHz bandwidth while consuming 1.56 mW, resulting in a Schreier figure-of-merit (FoMS) of 177-dB with robust and consistent performance across PVT corners.

Fields of Study & Subjects

Analog and Mixed-Signal Circuit Design Radio Frequency Integrated Circuit Design Low-power high-performance VLSI design

Publication details

Journal / source
IEEE Transactions on Circuits and Systems I Regular Papers
Volume
73
Issue
7
Pages
4519–4532
Publication date
9 February 2026
Language
EN