Hybrid Driving Strategy of SiC MOSFETs Buck Converter With Switching Losses Reduction and Safe Operation
Abstract
This paper presents a hybrid gate drive strategy for optimizing the performance of Silicon Carbide (SiC) MOSFETs in power converters. The proposed method dynamically switches between a current-source gate drive (CSG) mode and a voltage-source gate drive (VSG) mode based on the load current. Under light-load conditions, the CSG mode is utilized to maximize switching speed and minimize switching losses, while under heavy-load conditions, the VSG mode is activated to mitigate overvoltage stress by slowing down the device transitions. The strategy provides a significant reduction in switching losses, especially at light loads, while ensuring safe operation during heavy-load conditions. Experimental results on a 1000 W non-synchronous buck converter demonstrate the effectiveness of the proposed approach in improving both efficiency and overvoltage protection.
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Advanced DC-DC Converters
Multilevel Inverters and Converters
Publication details
- Journal / source
- IEEE Transactions on Circuits & Systems II Express Briefs
- Volume
- 73
- Issue
- 4
- Pages
- 493–497
- Publication date
- 26 February 2026
- Language
- EN