Numerical Analysis of Hydrogen Implant Process on Performance of Field-Stop-IGBT

In this paper, the fundamental physical mechanisms and performance characteristics of phosphorus-implanted and hydrogen-implanted Field-Stop-insulated gate bipolar transistor (FS-IGBT) are investigated. A simulation method employing trap charges is adopted to assess the device performance, and the differences in technological pathways for devices formed by hydrogen and phosphorus implanted are also examined. In contrast to traditional phosphorus-implanted Field-Stop-IGBT (PI-FS-IGBT) devices, hydrogen-implanted Field-Stop-IGBT (HI-FS-IGBT) devices exhibit a deeper P-N junction depth and a higher peak concentration. During turn-on transients, a lower peak current is observed, allowing the device to switch on quickly, thus reducing the turn-on loss (Eon). Furthermore, higher doses of hydrogen implantation result in a reduction in turn-off losses (Eoff). Results indicate that HI-FS-IGBT devices have superior trade-off performance compared to PI-FS-IGBT devices, with an optimal implantation dose of 0.4×1014 ions/cm2.