Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET

IEEE Transactions on Device and Materials Reliability 2026

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Authors: Zaiman Xiang, Tao Luo, Wenbo Wang, Bo Sun, Botao Sun, Qingchun Zhang, Guo Qi Zhang, Jiajie Fan
DOI: 10.1109/tdmr.2026.3655032
Cited by: 1
References: 27

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Copper Interconnects and Reliability Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
IEEE Transactions on Device and Materials Reliability
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
26
Issue
1
Pages
42–53
Publication date
19 January 2026