A Review on Cell Structure Optimization of IGBT Under Overload Condition

With the increasing connection of high-proportion renewable energy into power grids, the grid-forming converter technologies have gained significant attention due to their active support capability. When the power system experiences disturbances causing voltage sags of varying degrees, the overcurrent problems of insulated-gate bipolar transistor (IGBT) in the grid-forming converters threaten the safety and stability of the power system. To enhance the overload withstand capability of IGBT, many studies about optimization in terms of cell structure, packaging structure, and control strategy have been conducted. The state-of-the-art cell structure optimization of IGBT with an improved tradeoff relationship betweenon-state voltage (${V}_{\textsc{on}}\text {)}$and turn-off energy loss (${E}_{\textsc{off}}\text {)}$to lower power loss is reviewed. The progress of various technologies is discussed and analyzed in detail. The principles, implementation methods, and limitations of the technologies are summarized in the end.