Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer

Hafnium-based ferroelectric materials have broad application prospects. In this work, we successfully enhanced the ferroelectric properties of HfZrOxfilms by inserting TiO2layer and expounded the effect of layer thickness on the film’s performance. By modulating the interface layer thickness, the best overall performance was achieved at a thickness of 0.5 nm. Compared to the pure HfZrOxfilms without interface layer, the remanent polarization increased by$17.46\mu $C/cm2, and the fatigue characteristics improved by at least one order of magnitude. Storage tests were further performed on TiO2/HfZrOxsample with interlayer thickness of 0.5 nm. This work provides valuable insights for optimizing the performance of Hafnium oxide-based ferroelectric films for future applications.