Heavy-Ion-Induced Gate–Source Damage at High Drain Bias in SiC Power MOSFET
Abstract
The surface-level gate-to-source damage mechanism in silicon carbide (SiC) power metal– oxide–semiconductor field-effect transistors (MOSFETs) is investigated under heavy-ion irradiation at high drain bias conditions (about 50% of the breakdown voltage). Unlike conventional single-event burnout (SEB)-induced big void formation, the observed damage is confined to a single cell and becomes detectable only under gate bias. Cross-sectional analysis shows that the affected region includes the polysilicon gate, the gate oxide layer, the interlayer dielectric (ILD), the source metal, and the underlying SiC surface. Electrothermal simulations confirm that surface degradation is initiated by catastrophic gate oxide breakdown, followed by redistribution of the leakage current and localized thermal accumulation.
Fields of Study & Subjects
Radiation Effects in Electronics
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 73
- Issue
- 3
- Pages
- 1142–1148
- Publication date
- 12 January 2026