Thermally Robust AlScN Memristors With Thickness-Optimized Resistive Switching for Harsh Environment

AlScN-based memristors exhibit significant potential for nonvolatile memory storage and neuromorphic computing applications. However, the mechanisms underlying resistive switching in AlScN-based devices at subcoercive fields remain an open question. Here, we present a single-layer AlScN-based memristor and investigate the impact of AlScN film thicknesses on storage performance. Remarkably, the storage window of the memristor increases progressively with increasing AlScN film thickness. The switching ratio reaches approximately 300 for the AlScN-based device. Moreover, the effects of high-temperature annealing on memristor performance demonstrate that the devices maintain excellent uniformity and reproducibility and preserve a well-defined memory window (~9) even after 10 min of thermal treatment at 1073 K.