Gate-Induced Drain Leakage Effect-Driven 1T FeFET TCAM for Large-Scale Integration
Abstract
We propose a novel ferroelectric field-effect transistor (FeFET)-based ternary content addressable memory (TCAM) that exploits the gate-induced drain leakage (GIDL) effect to achieve ambipolar functionality. This design introduces the first FeFET TCAM with symmetric source/drain ohmic contacts, delivering significant advantages in cell scalability and fabrication simplicity, thereby establishing a foundation for large-scale TCAM array integration. The device’s matching functionality was validated under both static and transient conditions, exhibiting a reliable noise margin and a current ratio of approximately 10, maintained after over$4\times 10^{{3}}$query cycles or$10^{{4}}$s of query delay. This strategy paves the way for the next generation of high-throughput, large-scale TCAM arrays.
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 73
- Issue
- 3
- Pages
- 1149–1154
- Publication date
- 13 January 2026