Achieving Ultrahigh Threshold Voltage in Enhancement-Mode AlGaN/GaN HEMTs With an Al x Ti y O/p-GaN Integrated Gate Stack—Part II

IEEE Transactions on Electron Devices 2026

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Authors: Rasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Anup Thakare, Mayank Shrivastava

DOI: 10.1109/ted.2026.3652534

Cited by: 1

References: 45

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies

References 45