Cryogenic Characterization and Reliability of 1T1R OxRAM Memory Bit Cell

This work explores the evolution of the oxide-based resistive random access memories (OxRAM) one-transistor one-resistor (1T1R) bit cell at cryogenic temperatures to assess its potential for supporting the emerging field of cryogenic electronics. For this aim, we go through the characterization of 1T1R structures embedding selectors of different sizes that allows to separate the implications of the selector from those of the resistor during set and reset operations. The analysis demonstrates that the MOSFET selector evolution exerts the most significant influence on bipolar HfO2-based OxRAM performances in the 300–40 K temperature range. The reduction of selector resistance, quantitatively more pronounced for selectors having high${R}_{\text {on}}$(the selector resistance in linear regime), helps to lower the reset programming conditions. This reduction of the memory operating point suggests that cryogenic applications may offer significant potential for advanced technology nodes. Finally, reliability tests reveal enhanced endurance capabilities featuring an increased programmed stability toward cryogenic operation.