GaN Digital IC Operating Up to 800 °C Temperature

IEEE Transactions on Electron Devices 2026

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Authors: Yixin Xiong, Ajay Kumar Visvkarma, Rian Guan, Juan N. Jimenez Gaona, Zequan Chen, N.R. Banner, Chan-Wen Chiu, Xiaojun Zheng, Suzanne E. Mohney, Thomas Nelson Jackson, Rongming Chu
DOI: 10.1109/ted.2026.3653728
Cited by: 1
References: 28

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced Power Amplifier Design

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
3
Pages
1259–1265
Publication date
6 February 2026