Investigation Into Degradation and Failure Mechanism of Schottky-Type p-GaN Gate HEMT Under Power Cycling Tests

IEEE Transactions on Electron Devices 2026

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Authors: Zijun Luo, Zhiyuan He, Liang He, Ke Zhang, Yijun Shi, Xinghuan Chen, Hao Niu, Xianzhong Zhou, Yuan Chen, G. Lu

DOI: 10.1109/ted.2026.3653730

Cited by: 2

References: 41

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced Power Amplifier Design

References 41