Mechanistic Study of Front-Side Structural in IGBT: Exploring the Effects of True Gate and Contact Proportions on Performance

This study investigates the impact of front-side structural modifications, specifically true gate and contact proportions, on the performance of insulated AT bipolar transistor (IGBT) through TCAD simulations. The analysis explores the underlying mechanisms, such as current density distribution, carrier extraction efficiency, and space charge region evolution during switching events. It was observed that smaller contact proportions enhance turn-on speed and reduce losses by improving the uniformity of current distribution and increasing the efficiency of carrier extraction. This results in a faster response during the turn-on phase. In contrast, larger true AT proportions improve the AT control over the channel current, providing better modulation of the electric field, which enhances the balance between conduction and switching characteristics. These modifications contribute to a reduction in${V}_{\text {CEsat}}$, with structures featuring smaller contact proportions showing a more significant reduction in${V}_{\text {CEsat}}$. These findings were further validated through experimental tests using multiproject wafer (MPW) wafers, confirming the simulation results and providing reliable evidence for the optimal design of IGBT structures in various application scenarios.