Performance and Damage Analysis of Photoconductive Semiconductor Switches-Based (100), (010), and (001) Fe: β -Ga₂O₃

This study reports an initial investigation of the performance and damage mechanisms in Fe:$\boldsymbol {\beta }$-Ga2O3photoconductive switches fabricated on (100), (010), and (001) crystal planes. The devices achieved a maximum conduction voltage of 25 kV; however, significant performance variations were observed across different crystal orientations under identical fabrication and testing protocols. Failure analysis indicates that the inherent cleavage properties of$\boldsymbol {\beta }$-Ga2O3are a major contributor to device damage. These findings collectively demonstrate that crystal plane selection is a critical factor governing the performance of Fe:$\boldsymbol {\beta }$-Ga2O3-based photoconductive switches.