Characterizing Carrier Traps in Ga 2 O 3 Schottky Barrier Diodes Using the Current Transient Method

Interfacial and internal traps are the main factors limiting the performance and reliability of Ga2O3Schottky barrier diodes (SBDs). Herein, the trap characteristics of Ga2O3SBDs are investigated using the current transient method, elucidating the carrier trapping and detrapping processes. Under the forward and negative voltage stress, different traps can capture electrons from various sources. The test results show that there are five different types of electronic traps in the Ga2O3device, and each trap corresponds to a different time constant, activation energy, and location. The activation energies of these traps are 0.089, 0.2, 0.81, and 0.95 eV, respectively. In addition, there exists a temperature-independent electronic trap whose behavior may be related to the direct tunneling process. Therefore, this method can be applied to the reliability study of Ga2O3to achieve nondestructive characterization of Ga2O3SBD traps.