Poly-TPD/WSe₂: PCBM/PCBM Based High Performance Broadband Photodetector

This article analyzes the performance of a broadband photodetector based on an ITO/Poly-TPD (PTPD)/WSe2:PCBM/PCBM/Al architecture. The PTPD or Poly-TPD serves as hole transport layer (HTL) and WSe2:PCBM nanocomposite film functions as active layer, while the PCBM film acts as electron transport layer (ETL) for the proposed device. The low-cost dispersion method is used to prepare PTPD, PCBM, and WSe2:PCBM nanocomposite solutions. The spin coater is used for film deposition, while the shadow masking technique is used for Al electrode deposition in a thermal evaporation chamber. The photodetector attains high sensitivity,${R} _{S}$(A/W), external quantum efficiency (EQE) (%), and${D} ^{\ast } $(Jones) values of 0.5, 1395, and 5.7$\times 10^{{5}}$% and$1.21\times 10^{{12}}$at 300 nm (UV); 0.8, 2446, and 4.0$\times 10^{{5}}$% and$2.12\times 10^{{12}}$at 750 nm (Vis.); and 1.2, 3425, and 5.3$\times 10^{{5}}$% and$2.97\times 10^{{12}}$at 800nm (NIR) on application of 1-V bias and at a constant optical power of$0.118~\mu $W. The WSe2:PCBM nanocomposite and the interfacial layers (ETL/HTL) exhibit encouraging properties for usage in optoelectronic applications.