The Impact of Strain Relaxation on the Hole Mobility in Biaxially Strained-Ge/SiGe pMOSFETs
Abstract
In this study, the impact of strain relaxation on carrier mobility has been investigated by using laser spike annealing. It is found that as laser spike pulses intensify, the hole mobility in strained-Ge/SiGe pMOSFETs deteriorates significantly due to structural defects generated during strain relaxation. Evaluation of the scattering effect suggests that the defect-limited mobility ($\mu _{\text {defect}}\text {)}$serves as the primary factor of carrier mobility with the surface roughness scattering in HfO2/Si/s-Ge/SiGe/Si pMOSFET devices. These findings confirm that suppressing strain relaxation is a necessary approach for achieving high-mobility strained germanium devices.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Silicon and Solar Cell Technologies
Semiconductor materials and devices
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 73
- Issue
- 3
- Pages
- 1669–1674
- Publication date
- 4 February 2026