Projected Performance of MoS 2 -Based SRAM Incorporating Defect-Induced Threshold Voltage Variations

IEEE Transactions on Electron Devices 2026

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Authors: Chenyu Zhao, Yuquan Zhou, Yanming Liu, Peigen Zhang, He Tian

DOI: 10.1109/ted.2026.3657740

Cited by: 0

References: 28

Fields of Study & Subjects

2D Materials and Applications Advanced Memory and Neural Computing Advancements in Semiconductor Devices and Circuit Design

References 28