Investigation of GIDL RTN Mechanism in FinFET: Experimental Evidence and Theoretical Analysis

IEEE Transactions on Electron Devices 2026

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Authors: Anyi Zhu, Zixuan Sun, Zirui Wang, Lining Zhang, Runsheng Wang

DOI: 10.1109/ted.2026.3658282

Cited by: 0

References: 23

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies

References 23