Four-Level Stacked Si 0.7 Ge 0.3 Channel Gate-All-Around Transistor Using Novel Channel Release and Passivation Technology

IEEE Transactions on Electron Devices 2026

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Authors: Xiaofeng Jia, Fei Zhao, Ke Feng, Shuai Yang, Jiahan Yu, Yihong Lu, Haoyan Liu, Yongliang Li

DOI: 10.1109/ted.2026.3658418

Cited by: 2

References: 20

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Photonic and Optical Devices

References 20