A 3-D Analytical Modeling of High- k MOSFETs Using Conformal Mapping: A Cell Topology Perspective
Abstract
A 3-D analytical model from the cell topology perspective is developed to optimize the specificon-resistance (${R}_{\mathrm{ON,sp}}$) for power vertical MOSFETs with a high-$k$insulating dielectric (HKMOS). Based on the circular-cell solution solved by Green’s function considering interface charges (${N}_{\text {it}}$), this model enables the transformation of cell topology from circle to polygon via Schwarz–Christoffel (SC) conformal mapping. The intrinsic coupling between cell layout and device design is also revealed to co-optimize${R}_{\mathrm{ON, {sp}}}$and breakdown voltage (BV).
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Volume
- 73
- Issue
- 3
- Pages
- 1203–1209
- Publication date
- 13 February 2026
- Language
- EN