Evolution of Resistance Variation of RRAM Models Considering Interface Barrier and Formation Energy

IEEE Transactions on Electron Devices 2026

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Authors: Rui Liu, Qian Wang, Sichen Qin, Yifei Ma, Jiawei Zhang, Guiquan Zhang

DOI: 10.1109/ted.2026.3659113

Cited by: 0

References: 30

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

References 30