Implementation of Boolean Logic Operation in Embedded Flash Memory for In-Memory Computing Applications
Abstract
This article presents, for the first time, a sequential logic-in-memory technique using embedded flash (eFlash) memory to address the integration challenges of previous methods that relied on memristor devices. In this work, Boolean primitives are executed and retained as a nonvolatile cell state inside the eFlash array, while cascaded operations are performed through a system-level sequential execution. The incompatibility of memristor devices with standard CMOS logic processes has limited their practical integration. The proposed eFlash-based approach offers full compatibility with CMOS circuits, resulting in improved operating speed and reduced energy consumption. A test chip was designed and fabricated using a 180-nm low-power CMOS process, successfully demonstrating arbitrary Boolean logic operations on a fabricated embeddednorflash memory test chip.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Low-power high-performance VLSI design
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Volume
- 73
- Issue
- 3
- Pages
- 1360–1365
- Publication date
- 12 February 2026
- Language
- EN