The Abnormal Effective Mobility Enhancement for FeFET With Cycling From the Polarization Switching-Induced Interface Charge Compensation

The ferroelectric-semiconductor interface poses a pivotal challenge in ferroelectric field-effect transistors (FeFETs), particularly the surface roughness-induced charge trapping. In this study, we explore the dynamic behavior of surface roughness mobility ($\mu _{\text {sr}}$) within HZO/Si FeFETs over different endurance cycles. By experimentally characterizing the electrical potential at the HZO/Si interface, we extract the corresponding$\mu _{\text {sr}}$and analyze its evolution with cycling. It is found that$\mu _{\text {sr}}$increases with repeated cycling, attributable to the defect compensation by charge trapping at the HZO/Si interface. The insights derived from the polarization switching-related scattering mechanisms are crucial for a deeper understanding of interface traps in FeFETs.