Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices 2026 Open access

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Authors: Sergio García-Sánchez, Ignacio Iniguez-de-la-Torre, Gaudencio Paz-Martínez, Philippe Artillan, Tomás González, Javier Mateos
DOI: 10.1109/ted.2026.3662300
Cited by: 0

Abstract

We investigate the frequency-dependent nonlinearities of an AlGaN/GaN high electron mobility transistor (HEMT) involved in terahertz (THz) detection by means of 2-D Monte Carlo (MC) simulations. The analysis shows that, below 1 THz, the responsivity roll-off is mainly governed by the passive microwave behavior of the device rather than by any limitation of the intrinsic detection mechanism. At higher frequencies, an inverse extraction method able to provide the intrinsic nonlinearity coefficients of the device reveals just a marginal broad enhancement around 1 THz, followed by a steep roll-off.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Terahertz technology and applications Superconducting and THz Device Technology

Publication details

Journal / source
IEEE Transactions on Electron Devices
Volume
73
Issue
4
Pages
2474–2477
Publication date
24 February 2026
Language
EN