ZrO 2 -Based AFTJs Enabling Sub-1.2 V Switching and Superior Endurance for Synaptic Weight Cells

We experimentally demonstrate ZrO2-based antiferroelectric (AFE) tunnel junctions (AFTJs) with logic-compatible write voltage (${V}_{\text {w}}$) down to 1.2 V and enhanced endurance. Nonvolatile resistance switching of the TiN/Ti/ZrO2/TiOxNy/TiN structure is realized through precisely controlled built-in bias ($V_{\text {int}}$). By systematically correlating polarization behavior with interface charge dynamics, we clarify that the tunneling electroresistance (TER) effect is predominantly governed by trapped charge at the ZrO2/TiOxNyinterface, while polarization switching plays an assisting role by regulating the trapping and detrapping processes and stabilizing the resistance states. This cooperative mechanism results in a robust and stable${I}_{\text {on}}$/${I}_{\text {off}}$ratio. The AFTJs further exhibit excellent conductance tunability with 40 states, low nonlinearity ($\alpha _{\text {p}}$/$\alpha _{\text {d}} = $–0.52/−1.24), and low asymmetry ($\vert \alpha _{\text {p}} -\alpha _{\text {d}}\vert = $0.72), which highlights their strong potential for synaptic weight cells. This work provides important physical insights into the resistance switching mechanism of AFTJs and offers guidance for the design and optimization of future FE and AFE memory devices.