Hot Carrier-Assisted Performance Enhancement in ZnO-Based UV Photodetectors Using Plasmonic Au Nanoparticles
Abstract
This study demonstrates a notable improvement in ultraviolet (UV) photodetector (PD) performance through the integration of gold nanoparticles (Au NPs) on a 3 M ZnO thin film (TF). The Au NPs induce a localized surface plasmon resonance (LSPR) effect, which enhances light absorption and promotes efficient charge carrier generation. The device, configured in an Ag/Au:ZnO/Ag metal-semiconductor-metal (MSM) structure, exhibited a remarkable enhancement in responsivity, increasing from 43 A/W (pristine ZnO) to$1.8~\boldsymbol {\times } 10^{{3}}$A/W, along with a sensitivity of$1.7~\boldsymbol {\times } 10^{{6}}$. This performance boost is attributed to plasmon-induced hot carrier injection and localized near-field enhancement. In addition, the device achieved a specific detectivity of$\boldsymbol {\sim }\!\!1~\boldsymbol {\times } 10^{{15}}$Jones, an external quantum efficiency (EQE) of 7%$\boldsymbol {\times } 10^{{5}}$%, and a linear dynamic range (LDR) of 124 dB (at$\boldsymbol {\lambda }_{\text {ex}} =330$nm). These results demonstrate the potential of plasmonic nanostructures (NSs) in driving next-generation, high-efficiency UV PDs based on solution-processed ZnO films.
Fields of Study & Subjects
ZnO doping and properties
Thin-Film Transistor Technologies
Plasmonic and Surface Plasmon Research
Publication details
- Journal / source
- IEEE Transactions on Electron Devices
- Volume
- 73
- Issue
- 10
- Pages
- 6167–6173
- Publication date
- 3 March 2026
- Language
- EN